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xrd analysis software eva  (Bruker Corporation)
96
Bruker Corporation xrd analysis software eva
Xrd Analysis Software Eva, supplied by Bruker Corporation, used in various techniques. Bioz Stars score: 96/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/eva+analysis+software/XRD+Software+-+DIFFRAC%2ESUITE/pmc10707557-47-29-33
Average 96 stars, based on 1 article reviews
xrd analysis software eva - by Bioz Stars, 2026-09
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high temperature xrd analysis  (Bruker Corporation)
99
Bruker Corporation high temperature xrd analysis
Fig. 4 shows that all BCs visibly increased in thickness after 1000 h of testing. The Si-BC also experienced extensive oxide spallation due to crack formation. The cross section shows that approximately one third of the former coating consists of TGO. There, mud cracks expanded which were followed by coalescence and terminated in local spallation of the TGO. As a result, the non-oxidized part of the initial Si layer was exposed to the surface unprotected. From top view the initial silicon is clearly visible due to TGO spallation, see Fig. 4 A. The layer of both the lower HfO2 content sample and the pure Si-BC consisted to approximately one third of (m)TGO and two thirds of initial coating. Agglomerated larger Hf-rich particles were locally detectable across large areas in the mTGO of the lower hafnia-doped variant whereas the lower part of non-oxidized silicon contained smaller hafnia particles. In some areas those large particles in the upper mTGO did not form and the hafnia has changed its size only slightly. Fig. 5 illustrates this variation in the mTGO microstructure for the 36 mol% HfO2-doped BC after 1000 h FCT. SEM EDS analysis suggested that the large particles are hafnon (HfSiO4). Within the higher doped variant, agglomerated hafnia-rich particles can be seen throughout the coating that were analysed as hafnon by <t>XRD,</t> see Fig. 4 C. They were still homogenously distributed in the BC. The entire BC was completely oxidized at the end of testing which means it consists only of mTGO without any residual silicon reservoir. This became clearly evident in the <t>XRD</t> <t>analysis</t> shown later in Fig. 10, too. Adhesion of both doped coatings was still good without any signs for spallation of the mTGO. Only widespread cracks were observed locally which seem not to harm the cohesion and adhesion of the BC, respectively. Although the doped BCs showed some cracks and the pure Si-BC even TGO spallation, the SiC substrate was unharmed and still protected by each BC variant since proper adhesion and cohesion of the coating was maintained. No enhanced oxidation was detected underneath vertical cracks.
High Temperature Xrd Analysis, supplied by Bruker Corporation, used in various techniques. Bioz Stars score: 99/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/eva+analysis+software/D8+ADVANCE/10__1016_slash_j__actamat__2019__10__050-71-0-4
Average 99 stars, based on 1 article reviews
high temperature xrd analysis - by Bioz Stars, 2026-09
99/100 stars
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analysis software  (Bruker Corporation)
99
Bruker Corporation analysis software
Fig. 4 shows that all BCs visibly increased in thickness after 1000 h of testing. The Si-BC also experienced extensive oxide spallation due to crack formation. The cross section shows that approximately one third of the former coating consists of TGO. There, mud cracks expanded which were followed by coalescence and terminated in local spallation of the TGO. As a result, the non-oxidized part of the initial Si layer was exposed to the surface unprotected. From top view the initial silicon is clearly visible due to TGO spallation, see Fig. 4 A. The layer of both the lower HfO2 content sample and the pure Si-BC consisted to approximately one third of (m)TGO and two thirds of initial coating. Agglomerated larger Hf-rich particles were locally detectable across large areas in the mTGO of the lower hafnia-doped variant whereas the lower part of non-oxidized silicon contained smaller hafnia particles. In some areas those large particles in the upper mTGO did not form and the hafnia has changed its size only slightly. Fig. 5 illustrates this variation in the mTGO microstructure for the 36 mol% HfO2-doped BC after 1000 h FCT. SEM EDS analysis suggested that the large particles are hafnon (HfSiO4). Within the higher doped variant, agglomerated hafnia-rich particles can be seen throughout the coating that were analysed as hafnon by <t>XRD,</t> see Fig. 4 C. They were still homogenously distributed in the BC. The entire BC was completely oxidized at the end of testing which means it consists only of mTGO without any residual silicon reservoir. This became clearly evident in the <t>XRD</t> <t>analysis</t> shown later in Fig. 10, too. Adhesion of both doped coatings was still good without any signs for spallation of the mTGO. Only widespread cracks were observed locally which seem not to harm the cohesion and adhesion of the BC, respectively. Although the doped BCs showed some cracks and the pure Si-BC even TGO spallation, the SiC substrate was unharmed and still protected by each BC variant since proper adhesion and cohesion of the coating was maintained. No enhanced oxidation was detected underneath vertical cracks.
Analysis Software, supplied by Bruker Corporation, used in various techniques. Bioz Stars score: 99/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/eva+analysis+software/D2+PHASER/10__1246_slash_bcsj__20190110-57-14-12
Average 99 stars, based on 1 article reviews
analysis software - by Bioz Stars, 2026-09
99/100 stars
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Fig. 4 shows that all BCs visibly increased in thickness after 1000 h of testing. The Si-BC also experienced extensive oxide spallation due to crack formation. The cross section shows that approximately one third of the former coating consists of TGO. There, mud cracks expanded which were followed by coalescence and terminated in local spallation of the TGO. As a result, the non-oxidized part of the initial Si layer was exposed to the surface unprotected. From top view the initial silicon is clearly visible due to TGO spallation, see Fig. 4 A. The layer of both the lower HfO2 content sample and the pure Si-BC consisted to approximately one third of (m)TGO and two thirds of initial coating. Agglomerated larger Hf-rich particles were locally detectable across large areas in the mTGO of the lower hafnia-doped variant whereas the lower part of non-oxidized silicon contained smaller hafnia particles. In some areas those large particles in the upper mTGO did not form and the hafnia has changed its size only slightly. Fig. 5 illustrates this variation in the mTGO microstructure for the 36 mol% HfO2-doped BC after 1000 h FCT. SEM EDS analysis suggested that the large particles are hafnon (HfSiO4). Within the higher doped variant, agglomerated hafnia-rich particles can be seen throughout the coating that were analysed as hafnon by XRD, see Fig. 4 C. They were still homogenously distributed in the BC. The entire BC was completely oxidized at the end of testing which means it consists only of mTGO without any residual silicon reservoir. This became clearly evident in the XRD analysis shown later in Fig. 10, too. Adhesion of both doped coatings was still good without any signs for spallation of the mTGO. Only widespread cracks were observed locally which seem not to harm the cohesion and adhesion of the BC, respectively. Although the doped BCs showed some cracks and the pure Si-BC even TGO spallation, the SiC substrate was unharmed and still protected by each BC variant since proper adhesion and cohesion of the coating was maintained. No enhanced oxidation was detected underneath vertical cracks.

Journal: Acta Materialia

Article Title: Hafnia-doped silicon bond coats manufactured by PVD for SiC/SiC CMCs

doi: 10.1016/j.actamat.2019.10.050

Figure Lengend Snippet: Fig. 4 shows that all BCs visibly increased in thickness after 1000 h of testing. The Si-BC also experienced extensive oxide spallation due to crack formation. The cross section shows that approximately one third of the former coating consists of TGO. There, mud cracks expanded which were followed by coalescence and terminated in local spallation of the TGO. As a result, the non-oxidized part of the initial Si layer was exposed to the surface unprotected. From top view the initial silicon is clearly visible due to TGO spallation, see Fig. 4 A. The layer of both the lower HfO2 content sample and the pure Si-BC consisted to approximately one third of (m)TGO and two thirds of initial coating. Agglomerated larger Hf-rich particles were locally detectable across large areas in the mTGO of the lower hafnia-doped variant whereas the lower part of non-oxidized silicon contained smaller hafnia particles. In some areas those large particles in the upper mTGO did not form and the hafnia has changed its size only slightly. Fig. 5 illustrates this variation in the mTGO microstructure for the 36 mol% HfO2-doped BC after 1000 h FCT. SEM EDS analysis suggested that the large particles are hafnon (HfSiO4). Within the higher doped variant, agglomerated hafnia-rich particles can be seen throughout the coating that were analysed as hafnon by XRD, see Fig. 4 C. They were still homogenously distributed in the BC. The entire BC was completely oxidized at the end of testing which means it consists only of mTGO without any residual silicon reservoir. This became clearly evident in the XRD analysis shown later in Fig. 10, too. Adhesion of both doped coatings was still good without any signs for spallation of the mTGO. Only widespread cracks were observed locally which seem not to harm the cohesion and adhesion of the BC, respectively. Although the doped BCs showed some cracks and the pure Si-BC even TGO spallation, the SiC substrate was unharmed and still protected by each BC variant since proper adhesion and cohesion of the coating was maintained. No enhanced oxidation was detected underneath vertical cracks.

Article Snippet: High temperature XRD analysis (Bruker D8 Advance, Cu-Kα radiation, EVA/Topas 4.2 software package, Bruker AXS, Karlsruhe, Germany) was carried out to detect a possible cristobalite phase transition of the formed TGO.

Techniques: Variant Assay